- Patent Title: Semiconductor device and method of forming the semiconductor device
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Application No.: US15279154Application Date: 2016-09-28
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Publication No.: US10079233B2Publication Date: 2018-09-18
- Inventor: Robin Hsin-Ku Chao , Hemanth Jagannathan , ChoongHyun Lee , Chun Wing Yeung , Jingyun Zhang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: McGinn IP Law Group, PLLC
- Agent Vazken Alexanian
- Main IPC: H01L21/324
- IPC: H01L21/324 ; H01L21/8238 ; H01L27/092 ; H01L29/165 ; H01L21/02 ; H01L29/10
Abstract:
A method of forming a semiconductor device, includes forming first and second SiGe fins on a substrate, forming a protective layer on the first SiGe fin, forming a germanium-containing layer on the second SiGe fin and on the protective layer on the first SiGe fin, and performing an anneal to react the germanium-containing layer with a surface of the second SiGe fin.
Public/Granted literature
- US20180090494A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE Public/Granted day:2018-03-29
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