A memory device including a plurality of memory unit cells arranged in a crossbar configuration for a neural network is provided. Each of the memory unit cells includes a readout transistor, a charging transistor, a discharging transistor, and a metal-insulator-metal (MIM) capacitor connected to one of source/drain regions of each of the charging transistor and the discharging transistor and a functional gate of the readout transistor for storing analog information.