Invention Grant
- Patent Title: Compact three-dimensional mask-programmed read-only memory
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Application No.: US15455178Application Date: 2017-03-10
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Publication No.: US10079239B2Publication Date: 2018-09-18
- Inventor: Guobiao Zhang
- Applicant: Guobiao Zhang
- Applicant Address: CN HangZhou, ZheJiang US OR Corvallis
- Assignee: HangZhou HaiCun Information Technology Co., Ltd.,Guobiao Zhang
- Current Assignee: HangZhou HaiCun Information Technology Co., Ltd.,Guobiao Zhang
- Current Assignee Address: CN HangZhou, ZheJiang US OR Corvallis
- Priority: CN201710105750 20170227; CN201710109705 20170228
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C7/00 ; H01L27/112 ; H01L27/24 ; G11C17/04 ; H01L27/06 ; H01L45/00 ; H01L27/102 ; H01L49/02 ; G11C13/00

Abstract:
A compact three-dimensional mask-programmed read-only memory (3D-MPROMC) is disclosed. Its memory array and a decoding stage thereof are formed on a same memory level above the substrate. The memory layers of the memory devices in the memory array have at least two different thicknesses, while the middle layer of the decoding device in the decoding stage has the same thickness as the thinnest memory layer.
Public/Granted literature
- US20170186811A1 Compact Three-Dimensional Mask-Programmed Read-Only Memory Public/Granted day:2017-06-29
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