Invention Grant
- Patent Title: Manufacture of a CdHgTe multispectral photodiode array by cadmium diffusion
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Application No.: US15289577Application Date: 2016-10-10
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Publication No.: US10079263B2Publication Date: 2018-09-18
- Inventor: Florent Rochette
- Applicant: Commissariat a L'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1502136 20151012
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/101 ; H01L31/103 ; H01L31/18

Abstract:
A method for manufacturing a multi-spectral photodiode array in a CdxHg1-xTe semiconductor layer constituted of pixels, the method including a step of producing a PN junction in each pixel and further includes producing a cadmium-rich structure on the semiconductor layer, structured so that all the pixels are not surmounted by a same quantity of cadmium atoms, this quantity being able to be zero; and inter-diffusion annealing, realizing the diffusion of cadmium atoms from the cadmium-rich structure to the semiconductor layer. Pixels that do not all have the same cutoff wavelength are thereby obtained.
Public/Granted literature
- US20170104026A1 MANUFACTURE OF A CDHGTE MULTISPECTRAL PHOTODIODE ARRAY BY CADMIUM DIFFUSION Public/Granted day:2017-04-13
Information query
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