Invention Grant
- Patent Title: High electron mobility transistor with indium nitride layer
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Application No.: US15173907Application Date: 2016-06-06
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Publication No.: US10079296B2Publication Date: 2018-09-18
- Inventor: Chen-Hao Chiang , Po-Chun Liu , Chi-Ming Chen , Min-Chang Ching , Chung-Yi Yu , Chia-Shiung Tsai , Ru-Liang Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/18 ; H01L31/18 ; H01L29/66 ; H01L29/20 ; H01L29/45 ; H01L23/31 ; H01L29/205 ; H01L33/00 ; H01L21/225 ; H01L21/324
Abstract:
A semiconductor device includes an indium gallium nitride layer over an active layer. The semiconductor device further includes an annealed region beneath the indium gallium nitride layer, the annealed region comprising indium atoms driven from the indium gallium nitride layer into the active layer.
Public/Granted literature
- US20160284827A1 HIGH ELECTRON MOBILITY TRANSISTOR WITH INDIUM NITRIDE LAYER Public/Granted day:2016-09-29
Information query
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