Invention Grant
- Patent Title: Graphene electronic device having channel layer including graphene islands and method of fabricating the same
-
Application No.: US15237107Application Date: 2016-08-15
-
Publication No.: US10079313B2Publication Date: 2018-09-18
- Inventor: Kiyoung Lee , Jinseong Heo , Woojong Yu , Yongseon Shin
- Applicant: Samsung Electronics Co., Ltd. , Research & Business Foundation, SUNGKYUNKWAN UNIVERSITY
- Applicant Address: KR Gyeonggi-do KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.,Research & Business Foundation Sungkyunkwan University
- Current Assignee: Samsung Electronics Co., Ltd.,Research & Business Foundation Sungkyunkwan University
- Current Assignee Address: KR Gyeonggi-do KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2015-0116103 20150818
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/16 ; H01L29/24 ; H01L29/267 ; H01L29/66 ; H01L21/04 ; H01L21/02
Abstract:
A graphene electronic device includes a gate insulating layer on a conductive substrate, a channel layer on the gate insulating layer, and a source electrode on one end of the channel layer and a drain electrode on another end of the channel layer. The channel layer includes a semiconductor layer and a graphene layer in direct contact with the semiconductor layer, and the graphene layer includes a plurality of graphene islands spaced apart from each other.
Public/Granted literature
Information query
IPC分类:
