A semiconductor light-receiving device includes: a semi-insulating substrate; and a buffer layer, a p-type contact layer, a light absorption layer, a p-type field alleviating layer, an avalanche multiplication layer, an n-type field alleviating layer and an n-type contact layer laminated in order on the semi-insulating substrate, wherein the buffer layer includes a superlattice obtained by alternately laminating an InP layer and an AlxGayIn1-x-yAs layer (0.16≤x≤0.48, 0≤y≤0.31) and does not absorb light of a wavelength band absorbed by the light absorption layer.