An exemplary embodiment of the present invention provides an optical sensor, including: a substrate; an infrared ray sensing thin film transistor including a first semiconductor layer that is formed on the substrate and arranged to operate by receiving infrared light, and a bandpass filter formed on the substrate and sized and arranged to pass the infrared light; a visible ray sensing thin film transistor including a second semiconductor layer formed on the substrate and arranged to operate by receiving visible light; and a switching thin film transistor including a third semiconductor layer formed on the substrate, wherein the bandpass filter may be formed of a metal material patterned to have features, successive features spaced apart from each other by a predetermined period so as to pass the infrared light and to block the visible light.