Invention Grant
- Patent Title: Semiconductor device, charge pump circuit, semiconductor system, vehicle, and control method of semiconductor device
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Application No.: US15397765Application Date: 2017-01-04
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Publication No.: US10079596B2Publication Date: 2018-09-18
- Inventor: Shinichi Koyama , Takeshi Kusunoki , Wei Zhou , Hiromasa Suzuki
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2016-045322 20160309
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H03K3/00 ; H03K17/082 ; H02M3/07 ; G05F1/56 ; H02M1/32 ; H02M3/156 ; H02M3/18 ; H02H11/00

Abstract:
A semiconductor device capable of preventing deterioration of a transistor caused by a flow of an overcurrent is provided. According to an embodiment, a semiconductor chip includes a first transistor provided between a high-potential side voltage terminal to which a constant voltage generated by reducing a power-supply voltage is supplied and an output terminal, a second transistor provided between a low-potential side voltage terminal to which a ground voltage is supplied and the output terminal, a control circuit controlling turning-on/off of the first and second transistors, a boosting circuit boosting the power-supply voltage by using a voltage of the output terminal to generate an output voltage, and an overvoltage detection circuit detecting an overvoltage of a power-supply line that couples the high-potential side voltage terminal and the first transistor to each other. The control circuit performs control to turn off the second transistor, when the overvoltage has been detected.
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