Invention Grant
- Patent Title: Nonvolatile dual in-line memory module and method for operating the same
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Application No.: US15244849Application Date: 2016-08-23
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Publication No.: US10083090B2Publication Date: 2018-09-25
- Inventor: HyunJu Yoon
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2016-0036644 20160328
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F11/14 ; G06F3/06 ; G11C11/406 ; G06F13/40

Abstract:
A nonvolatile memory module includes a plurality of volatile memory devices sharing a data bus through which data is transmitted and a control bus through which a command and an address are transmitted; at least one nonvolatile memory device; and a controller including a backup logic which backs up data stored in the plurality of volatile memory devices when a fail in power of the host is detected or a backup operation is instructed from the memory controller of the host, wherein the backup logic sets a command address latency (CAL) of one among the plurality of volatile memory devices to a first value, and sets a command address latency of remaining volatile memory devices to a second value different from the first value.
Public/Granted literature
- US20170277594A1 NONVOLATILE DUAL IN-LINE MEMORY MODULE AND METHOD FOR OPERATING THE SAME Public/Granted day:2017-09-28
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