• Patent Title: Semiconductor memory apparatus for adjusting voltage level of global word line, and operating method thereof
  • Application No.: US15471207
    Application Date: 2017-03-28
  • Publication No.: US10083750B2
    Publication Date: 2018-09-25
  • Inventor: Ho Seok Em
  • Applicant: SK hynix Inc.
  • Applicant Address: KR Icheon-si, Gyeonggi-do
  • Assignee: SK hynix Inc.
  • Current Assignee: SK hynix Inc.
  • Current Assignee Address: KR Icheon-si, Gyeonggi-do
  • Agency: William Park & Associates Ltd.
  • Priority: KR10-2016-0108452 20160825
  • Main IPC: G11C13/00
  • IPC: G11C13/00
Semiconductor memory apparatus for adjusting voltage level of global word line, and operating method thereof
Abstract:
A semiconductor memory apparatus may include a memory cell, a write driver, and a voltage adjustment circuit. The write driver may provide the memory cell with a program current based on a write data. The voltage adjustment circuit may adjust a voltage level of a global word line coupled to the memory cell when a current flowing through the memory cell or the voltage level of the global word line is greater than a threshold value.
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