Invention Grant
- Patent Title: Semiconductor memory apparatus for adjusting voltage level of global word line, and operating method thereof
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Application No.: US15471207Application Date: 2017-03-28
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Publication No.: US10083750B2Publication Date: 2018-09-25
- Inventor: Ho Seok Em
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2016-0108452 20160825
- Main IPC: G11C13/00
- IPC: G11C13/00

Abstract:
A semiconductor memory apparatus may include a memory cell, a write driver, and a voltage adjustment circuit. The write driver may provide the memory cell with a program current based on a write data. The voltage adjustment circuit may adjust a voltage level of a global word line coupled to the memory cell when a current flowing through the memory cell or the voltage level of the global word line is greater than a threshold value.
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