Invention Grant
- Patent Title: Method of forming a flexible semiconductor layer and devices on a flexible carrier
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Application No.: US15404362Application Date: 2017-01-12
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Publication No.: US10083850B2Publication Date: 2018-09-25
- Inventor: Stephen W. Bedell , Devendra K. Sadana , Katherine L. Saenger , Abdelmajid Salhi
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Harrington & Smith
- Agent Louis J. Percello
- Main IPC: H01L21/68
- IPC: H01L21/68 ; H01L21/683 ; H01L21/78
Abstract:
A method for fabricating a semiconductor device comprises providing a preformed spalled structure comprising a stressor layer stack on a first surface of a semiconductor substrate; forming an interfacial release layer on an exposed second surface of the semiconductor substrate; adhesively bonding the interfacial release layer to a rigid handle substrate using an epoxy; removing at least a portion of the stressor layer stack from the first surface of the semiconductor substrate; processing the semiconductor substrate; and removing the semiconductor substrate from the interfacial release layer to impart flexibility to the semiconductor substrate.
Public/Granted literature
- US20170125277A1 Method of Forming a Flexible Semiconductor Layer and Devices on a Flexible Carrier Public/Granted day:2017-05-04
Information query
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