Invention Grant
- Patent Title: Method for manufacturing semiconductor device with trench isolation structure having plural oxide films
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Application No.: US15469500Application Date: 2017-03-25
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Publication No.: US10083857B2Publication Date: 2018-09-25
- Inventor: Takayuki Abe
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2016-065730 20160329
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/762 ; H01L23/522 ; H01L21/02 ; H01L29/06 ; H01L23/532 ; H01L27/06
Abstract:
A first silicon oxide film is formed on the inner wall of a deep trench by oxidizing the inner wall of the deep trench while heating the inner wall. Then, a second silicon oxide film is formed using at least one of atmospheric pressure CVD and plasma CVD so that the second silicon oxide film covers the first silicon oxide film in the deep trench.
Public/Granted literature
- US20170287774A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2017-10-05
Information query
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