- Patent Title: Semiconductor device and semiconductor device manufacturing method
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Application No.: US14482395Application Date: 2014-09-10
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Publication No.: US10083893B2Publication Date: 2018-09-25
- Inventor: Koji Ogiso , Kazuyuki Higashi , Tatsuo Migita
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2014-015829 20140130; JP2014-015988 20140130
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768
Abstract:
According to an embodiment, a semiconductor device is provided. The semiconductor device includes a through-hole, a copper layer, and a metal portion. The through-hole penetrates a semiconductor substrate between front and rear sides. The copper layer is formed inside the through-hole. The metal portion is made of a metal other than copper, formed closer to a hole core side of the through-hole than the copper layer is, and involves a void therein.
Public/Granted literature
- US20150214134A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2015-07-30
Information query
IPC分类:
