Invention Grant
- Patent Title: Backside contacts for integrated circuit devices
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Application No.: US15479493Application Date: 2017-04-05
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Publication No.: US10083910B2Publication Date: 2018-09-25
- Inventor: Jam-Wem Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/538 ; H01L21/8238 ; H01L21/768 ; H01L23/00 ; H01L25/065 ; H01L29/45 ; H01L27/088

Abstract:
A chip includes a semiconductor substrate, a well region in the semiconductor substrate, and a transistor formed at a front side of the semiconductor substrate. A source/drain region of the transistor is disposed in the well region. A well pickup region is disposed in the well region, wherein the well pickup region is at a back side of the semiconductor substrate. A through-via penetrates through the semiconductor substrate, wherein the through-via electrically inter-couples the well pickup region and the source/drain region.
Public/Granted literature
- US20170207169A1 Backside Contacts for Integrated Circuit Devices Public/Granted day:2017-07-20
Information query
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