Invention Grant
- Patent Title: Mask
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Application No.: US15011444Application Date: 2016-01-29
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Publication No.: US10084133B2Publication Date: 2018-09-25
- Inventor: Jui-Hsiang Chen , Hsin-Hung Chen , Po-Wen Teng , Chun-Chih Lai , Nan-Huei Jiang , Han-Chung Lai
- Applicant: Au Optronics Corporation
- Applicant Address: TW Hsinchu
- Assignee: Au Optronics Corporation
- Current Assignee: Au Optronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Priority: TW104113517A 20150428
- Main IPC: H01L51/00
- IPC: H01L51/00 ; B05C21/00 ; C23C14/04

Abstract:
A mask including patterned structures arranged sequentially along a predetermined direction and a peripheral area surrounding the patterned structures is provided. Each of the patterned structures includes an opening portion and a thinning portion surrounding the opening portion. The opening portion has through holes arranged in a matrix. An outline of the thinning portion has two side edges opposite to each other substantially parallel to the predetermined direction. The thinning portion is defined by an area demarked by the outline of the thinning portion and an outline of the opening portion. A thickness of the thinning portion is thinner than a thickness of the peripheral area.
Public/Granted literature
- US20160322572A1 MASK Public/Granted day:2016-11-03
Information query
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