An amorphous and nano nitride composite thin film, a method for forming the same, and an electronic device having the same are provided. The amorphous and nano nitride composite thin film has a composite structure in which a nitride phase that includes Zr and Al as nitride constituent elements and at least one metal phase are mixed, wherein the metal phase includes at least one element selected from the group including Cu and Ni, the nitride phase includes a ZrN crystalline phase in which a size of a grain is in the range of 10 nm to 500 nm, and a volume fraction of the ZrN crystalline phase is 10% or more.