Invention Grant
- Patent Title: Semiconductor device comprising power gating device
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Application No.: US14151880Application Date: 2014-01-10
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Publication No.: US10088886B2Publication Date: 2018-10-02
- Inventor: Hikaru Tamura
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2013-010716 20130124
- Main IPC: G06F1/26
- IPC: G06F1/26 ; G06F1/32

Abstract:
Supply of power to a plurality of circuits is controlled efficiently depending on usage conditions and the like of the circuits. An address monitoring circuit monitors whether a cache memory and an input/output interface are in an access state or not, and performs power gating in accordance with the state of the cache memory and the input/output interface. The address monitoring circuit acquires and monitors an address signal between a signal processing circuit and the cache memory or the input/output interface periodically. When one of the cache memory and the input/output interface is in a standby state and the other is in the access state, power gating is performed on the circuit that is in the standby state.
Public/Granted literature
- US09915993B2 Semiconductor device comprising power gating device Public/Granted day:2018-03-13
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