Invention Grant
- Patent Title: Semiconductor storage device and control method thereof
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Application No.: US15959354Application Date: 2018-04-23
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Publication No.: US10089257B2Publication Date: 2018-10-02
- Inventor: Yoshikazu Takeyama , Masaru Koyanagi , Akio Sugahara
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G06F13/16 ; G11C16/08 ; G06F13/40 ; G06F13/36

Abstract:
According to one embodiment, a semiconductor storage device includes a plurality of semiconductor chips and a control unit. The plurality of semiconductor chips is configured to connect to a signal transmission path and is controlled individually by individual chip enable signals. The plurality of semiconductor chips each includes a termination circuit connected to the signal transmission path. When one of the semiconductor chips is selected to input or output data, the control unit activates the termination circuit provided in the semiconductor chip that is not selected based on a first instruction signal and the chip enable signal.
Public/Granted literature
- US20180239721A1 SEMICONDUCTOR STORAGE DEVICE AND CONTROL METHOD THEREOF Public/Granted day:2018-08-23
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