Nonvolatile memory device and read method thereof
Abstract:
Disclosed is a nonvolatile memory device. The nonvolatile memory device includes a cell array including a plurality of memory cells, a page buffer including a plurality of latch sets, and a control logic. The page buffer is connected to the cell array through bit lines. The latch sets respectively are configured to sense data from selected memory cells among the memory cells through the bit lines. The latch sets respectively are configured to perform a plurality of read operations to determine one data state. The latch sets are respectively configured to store results of the read operations. The control logic configured to control the page buffer such that the latch sets sequentially and respectively store the results of the read operations, to compare data stored in the latch sets with each other, and to select one latch set among the latch sets based on the comparison result.
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