Invention Grant
- Patent Title: Nonvolatile memory device and read method thereof
-
Application No.: US15341253Application Date: 2016-11-02
-
Publication No.: US10090046B2Publication Date: 2018-10-02
- Inventor: Sang-Soo Park , June-Hong Park , Dongkyo Shim
- Applicant: Sang-Soo Park , June-Hong Park , Dongkyo Shim
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2015-0156935 20151109
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C11/56 ; G11C16/28 ; G11C16/10 ; G11C16/08 ; G11C29/02 ; G11C29/52

Abstract:
Disclosed is a nonvolatile memory device. The nonvolatile memory device includes a cell array including a plurality of memory cells, a page buffer including a plurality of latch sets, and a control logic. The page buffer is connected to the cell array through bit lines. The latch sets respectively are configured to sense data from selected memory cells among the memory cells through the bit lines. The latch sets respectively are configured to perform a plurality of read operations to determine one data state. The latch sets are respectively configured to store results of the read operations. The control logic configured to control the page buffer such that the latch sets sequentially and respectively store the results of the read operations, to compare data stored in the latch sets with each other, and to select one latch set among the latch sets based on the comparison result.
Public/Granted literature
- US20170133087A1 NONVOLATILE MEMORY DEVICE AND READ METHOD THEREOF Public/Granted day:2017-05-11
Information query