Invention Grant
- Patent Title: Structure and method to reduce copper loss during metal cap formation
-
Application No.: US15906956Application Date: 2018-02-27
-
Publication No.: US10090151B2Publication Date: 2018-10-02
- Inventor: Praneet Adusumilli , Alexander Reznicek , Oscar van der Straten
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Daniel P. Morris, Esq.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/283 ; H01L23/522 ; H01L23/532 ; H01L21/321 ; H01L21/768 ; H01L21/288 ; H01L21/285
Abstract:
A copper or copper alloy is formed in a reflow enhancement layer lined opening present in an interconnect dielectric material layer. A ruthenium (Ru) or osmium (Os) doped copper or copper alloy cap is then formed via ion implantation and annealing in an upper portion of a copper or copper alloy present in the opening. The upper portion of the copper or copper alloy containing the ruthenium (Ru) or osmium (Os) doped copper or copper alloy cap can mitigate or even present prevent preferential loss of copper which can aid in lowering the interconnect resistance of the structure.
Public/Granted literature
- US20180190592A1 STRUCTURE AND METHOD TO REDUCE COPPER LOSS DURING METAL CAP FORMATION Public/Granted day:2018-07-05
Information query
IPC分类:
