Invention Grant
- Patent Title: Plasma etching apparatus and plasma etching method
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Application No.: US15404471Application Date: 2017-01-12
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Publication No.: US10090161B2Publication Date: 2018-10-02
- Inventor: Shigeki Doba , Satoshi Yamada
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2011-073191 20110329
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01J37/32 ; H01L21/687 ; H01L21/768 ; H01L21/311
Abstract:
A plasma etching apparatus performs plasma etching on a substrate having a resist pattern formed thereon and an outer edge portion where the substrate surface is exposed. The plasma etching apparatus includes a support part that supports the substrate, a cover member that covers the outer edge portion of the substrate and prevents plasma from coming around the outer edge portion, and a control unit that generates plasma by controlling high frequency power application and supply of a processing gas for etching, and uses the generated plasma to etch the substrate that is supported by the support part and has the outer edge portion covered by the cover member. After etching the substrate, the control unit generates plasma by controlling high frequency power application and supply of a processing gas for ashing, and uses the generated plasma to perform ashing on the resist pattern on the etched substrate.
Public/Granted literature
- US20170133234A1 PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD Public/Granted day:2017-05-11
Information query
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