Invention Grant
- Patent Title: Plasma etching method
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Application No.: US15541812Application Date: 2016-01-19
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Publication No.: US10090168B2Publication Date: 2018-10-02
- Inventor: Hirotoshi Inui
- Applicant: ZEON CORPORATION
- Applicant Address: JP Chiyoda-ku, Tokyo
- Assignee: ZEON CORPORATION
- Current Assignee: ZEON CORPORATION
- Current Assignee Address: JP Chiyoda-ku, Tokyo
- Agency: Kenja IP Law PC
- Priority: JP2015-010540 20150122
- International Application: PCT/JP2016/051456 WO 20160119
- International Announcement: WO2016/117563 WO 20160728
- Main IPC: H01L21/311
- IPC: H01L21/311 ; C09K13/00 ; H01L21/02 ; H01L27/11551 ; H01L27/11578 ; H01L27/11556 ; H01L27/11582
Abstract:
The present invention is a plasma etching method comprising subjecting a silicon-containing film to plasma etching using a process gas, the process gas comprising a linear saturated fluorohydrocarbon compound represented by a formula (1), and a gaseous fluorine-containing compound (excluding the compound represented by the formula (1)) that functions as a fluorine radical source under plasma etching conditions, wherein x represents 3 or 4, y represents an integer from 5 to 9, and z represents an integer from 1 to 3. The present invention provides a plasma etching method that can selectively etch the silicon-containing film with respect to the mask, and form a hole or a trench having a good shape within a short time. CxHyFz (1)
Public/Granted literature
- US20170372915A1 PLASMA ETCHING METHOD Public/Granted day:2017-12-28
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