Invention Grant
- Patent Title: Selective plasma etching method of a first region containing a silicon atom and an oxygen atom
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Application No.: US15527360Application Date: 2015-11-20
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Publication No.: US10090191B2Publication Date: 2018-10-02
- Inventor: Maju Tomura , Takayuki Katsunuma , Masanobu Honda
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2014-246745 20141205
- International Application: PCT/JP2015/082646 WO 20151120
- International Announcement: WO2016/088575 WO 20160609
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/311 ; H01L23/535 ; H01J37/32
Abstract:
A method includes performing one or more times of a sequence and reducing a film thickness of a fluorocarbon-containing film formed by performing one or more times of the sequence. Each of the one or more times of the sequence includes forming the fluorocarbon-containing film on a processing target object by generating plasma of a processing gas containing a fluorocarbon gas and not containing an oxygen gas; and etching a first region with radicals of fluorocarbon contained in the fluorocarbon-containing film. In the method, an alternating repetition in which the one or more times of the sequence and the reducing of the film thickness of the fluorocarbon-containing film are alternately repeated is performed.
Public/Granted literature
- US20170323825A1 ETCHING METHOD Public/Granted day:2017-11-09
Information query
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