Invention Grant
- Patent Title: FinFET gate structure and method for fabricating the same
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Application No.: US15483098Application Date: 2017-04-10
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Publication No.: US10090206B2Publication Date: 2018-10-02
- Inventor: Shiu-Ko JangJian , Chi-Cheng Hung , Horng-Huei Tseng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee Address: TW
- Agency: Cooper Legal Group, LLC
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092 ; H01L29/49 ; H01L21/28 ; H01L29/78
Abstract:
A semiconductor device includes a n-type gate structure over a first semiconductor fin, in which the n-type gate structure includes a n-type work function metal layer overlying the first high-k dielectric layer. The n-type work function metal layer includes a TiAl (titanium aluminum) alloy, in which an atom ratio of Ti (titanium) to Al (aluminum) is in a range substantially from 1 to 3. The semiconductor device further includes a p-type gate structure over a second semiconductor fin, in which the p-type gate structure includes a p-type work function metal layer overlying the second high-k dielectric layer. The p-type work function metal layer includes titanium nitride (TiN), in which an atom ratio of Ti to N (nitrogen) is in a range substantially from 1:0.9 to 1:1.1.
Public/Granted literature
- US20170213770A1 FINFET GATE STRUCTURE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2017-07-27
Information query
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