Invention Grant
- Patent Title: Semiconductor device with heat dissipation and method of making same
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Application No.: US15863727Application Date: 2018-01-05
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Publication No.: US10090222B2Publication Date: 2018-10-02
- Inventor: Akira Hirao , Eiji Mochizuki , Fumihiko Momose
- Applicant: Fuji Electric Co., Ltd.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Agency: Chen Yoshimura LLP
- Priority: JP2017-028079 20170217
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L23/373 ; H01L21/48 ; H01L23/053

Abstract:
A semiconductor device includes: a semiconductor module and a heat dissipation sheet attached to a bottom surface of the semiconductor module, the heat dissipation sheet including: a sheet-shaped first conduction part that has a first main surface bonded to the bottom surface of the circuit substrate, a thermal conductivity of the first conduction part in directions along the first main surface being higher than a thermal conductivity of the first conduction part in a thickness direction; and a sheet-shaped second conduction part that is provided next to the first conduction part at an end of the first conduction part and that has a second main surface continuing from the first main surface, a thermal conductivity of the second conduction part in a thickness direction being higher than a thermal conductivity of the second conduction part in directions along the second main surface.
Public/Granted literature
- US20180240730A1 SEMICONDUCTOR DEVICE WITH HEAT DISSIPATION AND METHOD OF MAKING SAME Public/Granted day:2018-08-23
Information query
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