Invention Grant
- Patent Title: Ohmic contact structure for group III nitride semiconductor device having improved surface morphology and well-defined edge features
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Application No.: US15361682Application Date: 2016-11-28
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Publication No.: US10090394B2Publication Date: 2018-10-02
- Inventor: Helmut Hagleitner , Jason Gurganus
- Applicant: Cree, Inc.
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agent Anthony J. Josephson
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01L29/45 ; H01L29/20 ; H01L29/66 ; H01L29/778
Abstract:
Embodiments of an ohmic contact structure for a Group III nitride semiconductor device and methods of fabrication thereof are disclosed. In general, the ohmic contact structure has a root-mean-squared (RMS) surface roughness of less than 10 nanometers, and more preferably less than or equal to 7.5 nanometers, and more preferably less than or equal to 5 nanometers, and more preferably less than or equal to 2 nanometers, and even more preferably less than or equal to 1.5 nanometers.
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