Invention Grant
- Patent Title: Methods and apparatus for chemical vapor deposition of a cobalt layer
-
Application No.: US14815156Application Date: 2015-07-31
-
Publication No.: US10094023B2Publication Date: 2018-10-09
- Inventor: Sang Ho Yu , Mei Chang
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Agent Alan Taboada
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C23C16/46 ; C23C16/458 ; C23C16/18 ; C23C16/56 ; H01L21/285 ; H01L21/768 ; H01L23/532

Abstract:
Methods and apparatus for depositing a cobalt layer in features formed on a substrate are provided herein. In some embodiments, a method of depositing a cobalt layer atop a substrate includes: (a) providing a substrate to a substrate support that is rotatable between two processing positions; (b) exposing the substrate to a cobalt containing precursor at a first processing position to deposit a cobalt layer atop the substrate; (c) rotating the substrate having the deposited cobalt layer to a second processing position; and (d) treating the substrate at the second processing position to remove contaminants from the cobalt layer.
Public/Granted literature
- US20160035619A1 METHODS AND APPARATUS FOR CHEMICAL VAPOR DEPOSITION OF A COBALT LAYER Public/Granted day:2016-02-04
Information query
IPC分类: