A SiC single crystal having high crystallinity and a large diameter is provided.A SiC single crystal comprising a seed crystal with a c-plane and a non-c-plane, and a c-plane growth portion and an enlarged diameter portion that have grown from the c-plane and the non-c-plane of the seed crystal as origins in the direction of the c-plane and the direction of the non-c-plane,wherein a continuous region free of threading dislocations is present in a peripheral portion of a plane that is parallel to the c-plane of the seed crystal, and contains the seed crystal and the enlarged diameter portion, wherein the area of the continuous region occupies 50% or more of the total area of the plane.