Invention Grant
- Patent Title: Method of producing double-doped scintillation crystal
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Application No.: US15252231Application Date: 2016-08-31
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Publication No.: US10094048B2Publication Date: 2018-10-09
- Inventor: Ming-Chi Chou
- Applicant: NATIONAL SUN YAT-SEN UNIVERSITY
- Applicant Address: TW Kaohsiung
- Assignee: NATIONAL SUN YAT-SEN UNIVERSITY
- Current Assignee: NATIONAL SUN YAT-SEN UNIVERSITY
- Current Assignee Address: TW Kaohsiung
- Agency: CKC & Partners Co., Ltd.
- Priority: TW104132027A 20150925
- Main IPC: C30B33/02
- IPC: C30B33/02 ; C30B15/04 ; C30B29/34 ; G01T1/202

Abstract:
A method of producing a double-doped scintillation crystal is provided. Czochralski method is used to grow a double-doped single crystal boule. The double-doped single crystal boule is a single crystal boule of rare-earth silicate double-doped with cerium (Ce) and calcium (Ca) or magnesium (Mg). The double-doped single crystal boule is subjected to a thermal annealing process in a furnace. A yield of pixel samples of the double-doped scintillation crystal is improved after a processing process, and the present invention achieves low producing cost, high yield, less crystal fragmentations, high luminescence intensity and short decaying time.
Public/Granted literature
- US20170088977A1 METHOD OF PRODUCING DOUBLE-DOPED SCINTILLATION CRYSTAL Public/Granted day:2017-03-30
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