Invention Grant
- Patent Title: Semiconductor storage device
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Application No.: US14844089Application Date: 2015-09-03
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Publication No.: US10095651B2Publication Date: 2018-10-09
- Inventor: Hiroyuki Kaga
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G06F13/00
- IPC: G06F13/00 ; G06F13/42 ; G06F13/16 ; G06F13/40 ; G11C7/10 ; G11C7/22 ; G11C16/04 ; G11C16/32

Abstract:
A semiconductor storage device according to one embodiment includes a memory cell. A first latch is selectively coupled to the memory cell. A first bus coupled to the first latch and a second latch. A first charger charges the first bus. A second bus transmits a signal of the same value both when first data is output and when second data is output from the first or second latch A second charger raises a voltage of the second bus from a first value to a second value. A controller whose input is coupled to the second bus controls the first charger to stop charging of the first bus based on the voltage of the second bus having reached the second value.
Public/Granted literature
- US20160267045A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2016-09-15
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