Invention Grant
- Patent Title: Semiconductor memory device which stores plural data in a cell
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Application No.: US15832557Application Date: 2017-12-05
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Publication No.: US10096358B2Publication Date: 2018-10-09
- Inventor: Noboru Shibata , Tomoharu Tanaka
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McCLelland, Maier & Neustadt, L.L.P.
- Priority: JP2004-024475 20040130; JP2004-160165 20040528
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C11/56 ; G11C16/34 ; G11C16/12 ; G11C16/04 ; G11C16/10

Abstract:
A memory cell array is configured to have a plurality of memory cells arranged in a matrix, each of the memory cells being connected to a word line and a bit line and being capable of storing n values (n is a natural number equal to or larger than 3). A control circuit controls the potentials of the word line and bit line according to input data and writes data into a memory cell. The control circuit writes data into the memory cell to a k-valued threshold voltage (k
Public/Granted literature
- US20180096723A1 SEMICONDUCTOR MEMORY DEVICE WHICH STORES PLURAL DATA IN A CELL Public/Granted day:2018-04-05
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