Invention Grant
- Patent Title: Semiconductor device including nonvolatile memory configured to switch between a reference current reading system and a complimentary reading system
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Application No.: US15802277Application Date: 2017-11-02
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Publication No.: US10102915B2Publication Date: 2018-10-16
- Inventor: Tamiyu Kato , Takanobu Suzuki
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott, Will & Emery LLP
- Priority: JP2014-179180 20140903
- Main IPC: G11C16/28
- IPC: G11C16/28 ; G11C7/18 ; G11C7/06 ; G11C16/10

Abstract:
The present invention provides a semiconductor device including a nonvolatile memory of which the memory size of a data area and the memory size of a code area can be freely changed. The semiconductor device according to one embodiment includes a nonvolatile memory which can switch between a reference current reading system which performs data read by comparing a current flowing through a first memory cell as a read target and the reference current and a complementary reading system which performs data read by comparing currents flowing through a first memory cell and a second memory cell storing complementary data, as a read target.
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