- Patent Title: Multi-bit-per-cell three-dimensional one-time-programmable memory
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Application No.: US15488435Application Date: 2017-04-14
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Publication No.: US10102917B2Publication Date: 2018-10-16
- Inventor: Guobiao Zhang
- Applicant: ChengDu HaiCun IP Technology LLC
- Applicant Address: CN ChengDu, SiChuan US OR Corvallis
- Assignee: ChengDu HaiCun IP Technology LLC,Guobiao Zhang
- Current Assignee: ChengDu HaiCun IP Technology LLC,Guobiao Zhang
- Current Assignee Address: CN ChengDu, SiChuan US OR Corvallis
- Priority: CN201610238012 20160414
- Main IPC: G11C17/16
- IPC: G11C17/16 ; G11C29/00 ; G11C7/14 ; G11C11/56 ; G11C13/00 ; G11C17/18
Abstract:
A multi-bit-per-cell three-dimensional read-only memory (3D-OTPMB) comprises a plurality of OTP cells stacked above a semiconductor substrate. Each OTP cell comprises an antifuse layer, which is irreversibly switched from a high-resistance state to a low-resistance state during programming. By adjusting the programming current, the programmed antifuses have different resistances.
Public/Granted literature
- US20170301405A1 Multi-Bit-Per-Cell Three-Dimensional One-Time-Programmable Memory Public/Granted day:2017-10-19
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