Invention Grant
- Patent Title: Method of forming capacitor structure
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Application No.: US14612740Application Date: 2015-02-03
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Publication No.: US10102972B2Publication Date: 2018-10-16
- Inventor: Wei-Chun Hua , Chung-Long Chang , Chun-Hung Chen , Chih-Ping Chao , Jye-Yen Cheng , Hua-Chou Tseng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01G4/005
- IPC: H01G4/005 ; H01L23/522 ; H01L49/02

Abstract:
A method of forming a capacitor structure includes forming a first set of electrodes having a first electrode and a second electrode, wherein each electrode of the first set of electrodes has an L-shaped portion. The method further includes forming a second set of electrodes having a third electrode and a fourth electrode, wherein each electrode of the second set of electrodes has an L-shaped portion. The method further includes forming insulation layers between the first set of electrodes and the second set of electrodes. The method further includes forming a first L-shaped line plug connecting the first electrode to the third electrode, wherein an entirety of an outer surface of the first L-shaped line plug is recessed with respect to an outer surface of the L-shaped portion of the first electrode. The method further includes forming a second line plug connecting the second electrode to the fourth electrode.
Public/Granted literature
- US20150155096A1 METHOD OF FORMING CAPACITOR STRUCTURE Public/Granted day:2015-06-04
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