Invention Grant
- Patent Title: Manufacturing method of semiconductor device
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Application No.: US15706256Application Date: 2017-09-15
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Publication No.: US10103033B2Publication Date: 2018-10-16
- Inventor: Daisuke Umeda
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott, Will & Emery LLP
- Priority: JP2016-188465 20160927
- Main IPC: H01L21/3105
- IPC: H01L21/3105 ; H01L21/311 ; G03F7/16 ; G03F7/039 ; H01L21/02 ; G03F7/09 ; G03F7/26 ; G03F7/20 ; G03F7/038 ; H01L21/027 ; H01L27/115 ; H01L27/11531 ; H01L27/11524 ; H01L27/11529
Abstract:
An object of the present invention is to provide a semiconductor device including a film to be processed having a uniform height. A first coating film made of photosensitive material is formed so as to cover step parts and to become thicker in a central part of a semiconductor substrate in planar view and to become thinner in an outer peripheral part. Next, a first pattern part located on the central part side relative to the step parts and a second pattern part located on the outer peripheral part side relative to the step parts are formed. The first pattern part and the second pattern part are formed so that the occupied area of the first pattern part in planar view becomes smaller than that of the second pattern part in planar view. Next, the first pattern part and the second pattern part are sagged by heating. Next, a second coating film is formed by spin coating so as to cover the step parts.
Public/Granted literature
- US20180090337A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2018-03-29
Information query
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