Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15123794Application Date: 2015-01-15
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Publication No.: US10103090B2Publication Date: 2018-10-16
- Inventor: Takuya Kadoguchi , Takahiro Hirano , Takanori Kawashima , Keita Fukutani , Tomomi Okumura , Masayoshi Nishihata
- Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA , DENSO CORPORATION
- Applicant Address: JP Toyota-shi, Aichi JP Kariya-shi, Aichi
- Assignee: Toyota Jidosha Kabushiki Kaisha,Denso Corporation
- Current Assignee: Toyota Jidosha Kabushiki Kaisha,Denso Corporation
- Current Assignee Address: JP Toyota-shi, Aichi JP Kariya-shi, Aichi
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- Priority: JP2014-046595 20140310
- International Application: PCT/JP2015/050894 WO 20150115
- International Announcement: WO2015/136968 WO 20150917
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/433 ; H01L21/48 ; H01L21/56 ; H01L23/31 ; H01L23/00

Abstract:
The semiconductor device includes a semiconductor element, and an electro-conductive first plate-like part electrically connected to a top-face-side electrode of the semiconductor element and including a first joint part projecting from a side face, and an electro-conductive second plate-like part including a second joint part projecting from a side face. A bottom face of the first joint part and a top face of the second joint part face one another, and are electrically connected via an electro-conductive bonding material. A bonding-material-thickness ensuring means is provided in a zone where the bottom face of the first joint part and the top face of the second joint part face one another to ensure a thickness of the electro-conductive bonding material between an upper portion of a front end of the second joint part and the bottom face of the first joint part.
Public/Granted literature
- US20170018484A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-01-19
Information query
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