Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15506426Application Date: 2016-03-11
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Publication No.: US10103096B2Publication Date: 2018-10-16
- Inventor: Yoshihiro Kamiyama
- Applicant: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Current Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Nixon & Vanderhye P.C.
- International Application: PCT/JP2016/057749 WO 20160311
- International Announcement: WO2017/154195 WO 20170914
- Main IPC: H01L23/50
- IPC: H01L23/50 ; H01L25/07 ; H01L25/11 ; H01L23/528 ; H01L23/495

Abstract:
A semiconductor device (10) of the present invention includes at least one circuit unit (41, 42, 43) which includes: a device main body (20); and a power supply terminal (31, 32, 33), an output terminal (34, 35, 36), and a ground terminal (37, 38, 39) which protrude from the device main body (20). The output terminal (34, 35, 36) protrudes from the device main body (20) in an opposite direction to the ground terminal (37, 38, 39). The power supply terminal (31, 32, 33) protrudes in a same direction as the ground terminal (37, 38, 39) and is positioned so as to be shifted in a direction orthogonal to an arrangement direction of the output terminal (34, 35, 36) and the ground terminal (37, 38, 39).
Public/Granted literature
- US20180166376A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-06-14
Information query
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