Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15347103Application Date: 2016-11-09
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Publication No.: US10103101B2Publication Date: 2018-10-16
- Inventor: Je-min Park , Dae-ik Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0121502 20131011
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/64 ; H01L23/522 ; H01L27/108 ; G11C7/06 ; G11C8/10 ; H01L21/3213 ; H01L21/768 ; H01L23/535 ; H01L23/532

Abstract:
A semiconductor device includes: a first interconnection line and a second interconnection line which extend apart from each other on a first plane at a first level on a substrate; a bypass interconnection line that extends on a second plane at a second level on the substrate; and a plurality of contact plugs for connecting the bypass interconnection line to the first interconnection line and the second interconnection line. A method includes forming a bypass interconnection line spaced apart from a substrate and forming on a same plane a plurality of interconnection lines connected to the bypass interconnection line via a plurality of contact plugs.
Public/Granted literature
- US20170062328A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-03-02
Information query
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