Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15210924Application Date: 2016-07-15
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Publication No.: US10103124B2Publication Date: 2018-10-16
- Inventor: Hironori Kawaminami
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2015-160579 20150817
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L25/065 ; H01L23/48 ; H01L23/528

Abstract:
A semiconductor device includes a first semiconductor chip including plural circuit blocks provided on a semiconductor substrate, and plural through-silicon vias that are arranged so as to surround the outer periphery of each of the plural circuit blocks and that penetrate the semiconductor substrate, and a second semiconductor chip that is stacked on the first semiconductor chip, and that is supplied with a power source through the plural through-silicon vias.
Public/Granted literature
- US20170053900A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-02-23
Information query
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