Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US15449481Application Date: 2017-03-03
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Publication No.: US10103155B2Publication Date: 2018-10-16
- Inventor: Kohei Sakaike , Toshiyuki Iwamoto , Tatsuya Kato , Keisuke Kikutani , Fumitaka Arai , Satoshi Nagashima , Koichi Sakata , Yuta Watanabe
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L27/11519
- IPC: H01L27/11519 ; H01L27/11524 ; H01L27/11556
Abstract:
A semiconductor memory device according to an embodiment, includes a first semiconductor member, a second semiconductor member, an insulating member, a plurality of electrode films, a first electrode, and a second electrode. The first semiconductor member and the second semiconductor member are separated in a first direction and extending in a second direction. The second direction crosses the first direction. The insulating member is provided between the first semiconductor member and the second semiconductor member. The plurality of electrode films are arranged to be separated from each other along the second direction. Each of the electrode films surrounds the first semiconductor member, the second semiconductor member, and the insulating member when viewed from the second direction. The first electrode is provided between the first semiconductor member and the electrode film. The second electrode is provided between the second semiconductor member and the electrode film.
Public/Granted literature
- US20170263615A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2017-09-14
Information query
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