Invention Grant
- Patent Title: Semiconductor structures including dielectric materials having differing removal rates
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Application No.: US15013298Application Date: 2016-02-02
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Publication No.: US10103160B2Publication Date: 2018-10-16
- Inventor: Srikant Jayanti , Fatma Arzum Simsek-Ege , Pavan Kumar Reddy Aella
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L29/788 ; H01L27/11582 ; H01L21/28 ; H01L21/8239 ; H01L21/311 ; H01L27/11556 ; H01L29/66 ; H01L29/04 ; H01L29/16 ; H01L29/51 ; H01L21/02 ; H01L21/3213 ; H01L29/792 ; H01L27/11551
Abstract:
Semiconductor structures may include a stack of alternating dielectric materials and control gates, charge storage structures laterally adjacent to the control gates, a charge block material between each of the charge storage structures and the laterally adjacent control gates, and a pillar extending through the stack of alternating oxide materials and control gates. Each of the dielectric materials in the stack has at least two portions of different densities and/or different rates of removal. Also disclosed are methods of fabricating such semiconductor structures.
Public/Granted literature
- US20160148949A1 SEMICONDUCTOR STRUCTURES INCLUDING DIELECTRIC MATERIALS HAVING DIFFERING REMOVAL RATES Public/Granted day:2016-05-26
Information query
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