Invention Grant
- Patent Title: Metal on elongated contacts
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Application No.: US15066297Application Date: 2016-03-10
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Publication No.: US10103171B2Publication Date: 2018-10-16
- Inventor: James Walter Blatchford , Scott William Jessen
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L27/118 ; H01L21/768 ; H01L27/092 ; H01L21/28 ; H01L21/283 ; H01L23/485 ; H01L21/8238 ; H01L21/311
Abstract:
An integrated circuit containing elongated contacts, including elongated contacts which connect to at least three active areas and/or MOS gates, and including elongated contacts which connect to exactly two active areas and/or MOS gates and directly connect to a first level interconnect. A process of forming an integrated circuit containing elongated contacts, including elongated contacts which connect to at least three active areas and/or MOS gates, using exactly two contact photolithographic exposure operations, and including elongated contacts which connect to exactly two active areas and/or MOS gates and directly connect to a first level interconnect.
Public/Granted literature
- US20160190156A1 METAL ON ELONGATED CONTACTS Public/Granted day:2016-06-30
Information query
IPC分类:
