Invention Grant
- Patent Title: Fin-shaped structure
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Application No.: US15345495Application Date: 2016-11-07
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Publication No.: US10103175B2Publication Date: 2018-10-16
- Inventor: Chih-Kai Hsu , Yu-Hsiang Hung , Ssu-I Fu , Jyh-Shyang Jenq
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L21/8242
- IPC: H01L21/8242 ; H01L27/12 ; H01L29/78 ; H01L29/66 ; H01L29/06 ; H01L21/762 ; H01L21/84 ; H01L29/10
Abstract:
A method of forming a fin-shaped structure includes the following steps. A substrate having at least a fin structure thereon is provided. A liner is formed on sidewalls of the fin structure. An oxide layer is formed between the fin structure and the substrate. The fin structure is removed until a bottom layer of the fin structure is reserved, to form a recess between the liner. A buffer epitaxial layer and an epitaxial layer are sequentially formed in the recess. A top part of the liner is removed until sidewalls of the epitaxial layer are exposed. Moreover, a fin-shaped structure formed by said method is also provided.
Public/Granted literature
- US20170053944A1 FIN-SHAPED STRUCTURE Public/Granted day:2017-02-23
Information query
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