Invention Grant
- Patent Title: Slurry for polishing phase-change materials and method for producing a phase-change device using same
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Application No.: US15392441Application Date: 2016-12-28
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Publication No.: US10103331B2Publication Date: 2018-10-16
- Inventor: Jeagun Park , Ungyu Paik , Jinhyung Park , Hao Cui , Jongyoung Cho , Heesub Hwang , Jaehyung Lim , Yehwan Kim
- Applicant: IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
- Applicant Address: KR Seoul
- Assignee: Industry-University Cooperation Foundation Hanyang University
- Current Assignee: Industry-University Cooperation Foundation Hanyang University
- Current Assignee Address: KR Seoul
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2010-0011142 20100205
- Main IPC: H01L45/00
- IPC: H01L45/00 ; C09G1/02

Abstract:
The present invention relates to slurry for polishing crystalline phase-change materials and to a method for producing a phase-change device using the same. The slurry for polishing crystalline phase-change materials according to one embodiment of the present invention comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water. In addition, the method for producing a phase-change device according to one embodiment of the present invention comprises the following steps: preparing a substrate; forming a crystalline phase-change material film on the substrate; and removing the phase-change material film through a chemical-mechanical polishing process using slurry for polishing phase-change materials, which comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water.
Public/Granted literature
- US20170141308A1 SLURRY FOR POLISHING PHASE-CHANGE MATERIALS AND METHOD FOR PRODUCING A PHASE-CHANGE DEVICE USING SAME Public/Granted day:2017-05-18
Information query
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