Invention Grant
- Patent Title: Dimension regulation of power device to eliminate hot spot generation
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Application No.: US15138091Application Date: 2016-04-25
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Publication No.: US10103724B2Publication Date: 2018-10-16
- Inventor: Derek Bernardon
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Shumaker & Sieffert, P.A.
- Main IPC: H03K17/082
- IPC: H03K17/082 ; H01L27/06 ; H01L23/34 ; H01L27/02 ; H02M1/32 ; H01L29/78 ; H03K17/08

Abstract:
A parameter is compared to a lower threshold. The parameter is a gate-to-source voltage that is associated with a first transistor or a drain current that is associated with the first transistor. The first transistor is a field effect transistor, and the first transistor is a power device. If one or more of at least one supplemental transistor is coupled to the first transistor, and the parameter is less than the lower threshold, a plurality of switches is controlled to decouple at least one of the at least one supplemental transistor from the first transistor.
Public/Granted literature
- US20170310317A1 DIMENSION REGULATION OF POWER DEVICE TO ELMINATE HOT SPOT GENERATION Public/Granted day:2017-10-26
Information query
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