Dimension regulation of power device to eliminate hot spot generation
Abstract:
A parameter is compared to a lower threshold. The parameter is a gate-to-source voltage that is associated with a first transistor or a drain current that is associated with the first transistor. The first transistor is a field effect transistor, and the first transistor is a power device. If one or more of at least one supplemental transistor is coupled to the first transistor, and the parameter is less than the lower threshold, a plurality of switches is controlled to decouple at least one of the at least one supplemental transistor from the first transistor.
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