Provided is a photolithography method, including: a) forming a photoresist layer satisfying D=m*(λ/2n) (D is a thickness of the photoresist layer, n is a refractive index of the photoresist, λ is a wavelength of irradiated light at the time of exposure, and m is a natural number of 1 or more) on a substrate; and b) manufacturing a photoresist pattern having a ring shape by exposing the photoresist layer and developing the exposed photoresist layer using a photo mask including a transparent substrate and a plate-type metal dot contacting a light emitting surface of the transparent substrate.