Invention Grant
- Patent Title: Apparatus having a memory cell and a shunt device
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Application No.: US15320788Application Date: 2014-07-30
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Publication No.: US10109346B2Publication Date: 2018-10-23
- Inventor: Hans S. Cho , Gary Gibson , Brent Buchanan
- Applicant: Hewlett Packard Enterprise Development LP
- Applicant Address: US TX Houston
- Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee Address: US TX Houston
- Agency: Mannava & Kang, P.C.
- International Application: PCT/US2014/048918 WO 20140730
- International Announcement: WO2016/018313 WO 20160204
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; H01L27/24 ; H01L45/00

Abstract:
According to an example, an apparatus may include an input line, an output line, and a memory cell connected between the input line and the output line. The memory cell may include a memristor connected in series with a selector. The apparatus may also include a shunt device connected to the input line, in which the shunt device is to divert a portion of current away from the memory cell in response to a voltage at the input line being greater than a threshold voltage.
Public/Granted literature
- US20170200495A1 APPARATUS HAVING A MEMORY CELL AND A SHUNT DEVICE Public/Granted day:2017-07-13
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