Invention Grant
- Patent Title: Memory device with a fuse protection circuit
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Application No.: US15493964Application Date: 2017-04-21
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Publication No.: US10109366B2Publication Date: 2018-10-23
- Inventor: Yu-Der Chih , Chen-Ming Hung , Jen-Chou Tseng , Jam-Wem Lee , Ming-Hsiang Song , Shu-Chuan Lee , Shao-Yu Chou , Yu-Ti Su
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: G11C17/00
- IPC: G11C17/00 ; G11C17/18 ; G11C17/16 ; H01L27/02
Abstract:
A memory device includes a memory circuit and a fuse protection circuit. The memory circuit includes a memory cell and a program line. The memory cell includes a fuse. The program line is configured to receive a program voltage for programming the fuse. The fuse protection circuit is coupled to the memory circuit and is configured to prevent unintentional programming of the fuse.
Public/Granted literature
- US20180166143A1 Memory Device with a Fuse Protection Circuit Public/Granted day:2018-06-14
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