Invention Grant
- Patent Title: Low profile coupled inductor substrate with transient speed improvement
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Application No.: US14956948Application Date: 2015-12-02
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Publication No.: US10109404B2Publication Date: 2018-10-23
- Inventor: Yipeng Su , Dongbin Hou , Fred C. Lee , Qiang Li
- Applicant: Virginia Tech Intellectual Properties, Inc.
- Applicant Address: US VA Blacksburg
- Assignee: Virginia Tech Intellectual Properties, Inc.
- Current Assignee: Virginia Tech Intellectual Properties, Inc.
- Current Assignee Address: US VA Blacksburg
- Agency: W&C IP
- Main IPC: H01F5/00
- IPC: H01F5/00 ; H01F27/28 ; H01F1/14 ; H01F17/00 ; H05K1/03 ; H01F3/14 ; H02M3/155 ; H05K1/02 ; H05K1/16
Abstract:
A low profile inductor structure suitable for use in a high power density power converter has one or more windings formed by vias through a thin, generally planar body of magnetic material forming the inductor core and conductive cladding on the body of magnetic material or material covering the magnetic material body. Variation of inductance with load current and other operational or environmental parameters is reduced to any desired degree by forming a slot that removes all or a portion of the magnetic material between the locations of the vias.
Public/Granted literature
- US20160086723A1 Low Profile Coupled Inductor Substrate with Transient Speed Improvement Public/Granted day:2016-03-24
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